Class 12 Physics - Chapter Semiconductor Electronics NCERT Solutions | When a forward bias is applied to a p-n
When a forward bias is applied to a p-n junction, it
(a) raises the potential barrier.
(b) reduces the majority carrier current to zero.
(c) lowers the potential barrier.
(d) None of the above.
When a forward bias is applied to a p-n junction, it lowers the value of potential barrier. In the case of a forward bias, the potential barrier opposes the applied voltage. Hence, the potential barrier across the junction gets reduced.
Hence, The correct statement is (c).
More Questions From Class 12 Physics - Chapter Semiconductor Electronics
- Q:-
A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?
- Q:-
In an unbiased p-n junction, holes diffuse from the p-region to n-region because
(a) free electrons in the n-region attract them.
(b) they move across the junction by the potential difference.
(c) hole concentration in p-region is more as compared to n-region.
(d) All the above.
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(a) Electrons are majority carriers and trivalent atoms are the dopants.
(b) Electrons are minority carriers and pentavalent atoms are the dopants.
(c) Holes are minority carriers and pentavalent atoms are the dopants.
(d) Holes are majority carriers and trivalent atoms are the dopants. - Q:-
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(d) None of the above.
- Q:-
For transistor action, which of the following statements are correct:
(a) Base, emitter and collector regions should have similar size and doping concentrations.
(b) The base region must be very thin and lightly doped.
(c) The emitter junction is forward biased and collector junction is reverse biased.
(d) Both the emitter junction as well as the collector junction are forward biased.
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Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (E g ) C , (E g ) Si and (E g ) Ge . Which of the following statements is true?
(a) (E g ) Si < (E g ) Ge < (E g ) C
(b) (E g ) C < (E g ) Ge > (E g ) Si
(c) (E g ) C > (E g ) Si > (E g ) Ge
(d) (E g ) C = (E g ) Si = (E g ) Ge
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